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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: 37 周
起订量: 1,000
递增量: 1,000
数量 价格
1,000+ ¥17.3616
总价:

¥ 17,361.60

CNY

所有价格均包含16%增值税。

属性
Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 600V
Drain-Source On Resistance-Max 360mΩ
Rated Power Dissipation 90|W
Qg Gate Charge 27nC
特性和应用

The STP13NM50 devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications