
制造商型号
FDS9926A
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Product Specification Section
onsemi FDS9926A - 产品规格
onsemi FDS9926A - 属性参数
Attributes Table
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 30mΩ |
Rated Power Dissipation: | 0.9|W |
Qg Gate Charge: | 9nC |
封装类型: | SOIC-8 |
安装方式: | Surface Mount |
特性和应用
The FDS9926A is a 20 V 30 mΩ 2.5 V Dual N-Channel MOSFETs use advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 10 V).
Features:
- 6.5 A, 20 V
- RDS(ON) = 30 mΩ @ VGS = 4.5 V
- RDS(ON) = 43 mΩ @ VGS = 2.5 V
- Optimized for use in battery protection circuits
- ±10 VGSS allows for wide operating voltage range
- Low gate charge
Applications:
- Power management
- Load switch
- Battery protection
View the complete family of N-channel mosfets
Pricing Section
全球库存:
0
新加坡仓库:
0
工厂货期:
6 周
数量
价格
2,500
¥2.2132
5,000
¥2.1743
7,500
¥2.1356
10,000
¥2.1356
12,500+
¥2.0967
Product Variant Information section
可提供的包装方式
标准包装数量:
2500/卷盘
封装类型:
SOIC-8
安装方式:
Surface Mount