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制造商型号

FDS9926A

Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

ECAD模型:
制造商: onsemi
标准包装:
Product Variant Information section
Date Code: 2135
Product Specification Section
属性参数
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 9nC
封装类型:  SOIC-8
安装方式: Surface Mount
特性和应用
The FDS9926A is a 20 V 30 mΩ 2.5 V Dual N-Channel  MOSFETs use advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 10 V).

Features:

  • 6.5 A, 20 V
  • RDS(ON) = 30 mΩ @ VGS = 4.5 V
  • RDS(ON) = 43 mΩ @ VGS = 2.5 V
  • Optimized for use in battery protection circuits
  • ±10 VGSS allows for wide operating voltage range
  • Low gate charge 

 Applications:

  • Power management
  • Load switch
  • Battery protection

View the complete family of N-channel mosfets

Pricing Section
全球库存:
137,500
新加坡仓库:
137,500
45,000
工厂库存:工厂库存:
0
工厂货期:
49 周
起订量:
2500
递增量:
2500
总价
¥ 11,856.50
CNY

所有价格均包含13%增值税。

数量
价格
2,500+
¥4.7426
Product Variant Information section