|Fet Type||Dual N-Ch|
|No of Channels||2|
|Drain-to-Source Voltage [Vdss]||20V|
|Drain-Source On Resistance-Max||0.08Ω|
|Rated Power Dissipation||0.7|W|
|Qg Gate Charge||5nC|
The FDC6305N is a 20V 0.08 Ohm Dual N-Channel 2.5V Specified PowerTrench Mosfet in a SSOT-6 package .
These N-Channel low threshold 2.5 V specified MOSFETs are produced using a PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Product Features :
- 2.7 A, 20 V. RDS(on) = 0.08 Ω @ VGS = 4.5 V, RDS(on) = 0.12 Ω @ VGS = 2.5 V
- Low gate charge (3.5 nC typical).
- Fast switching speed.
- High performance trench technology for extremelylow RDS(ON).
- SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).
- AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
- External AC-DC Merchant Power Supply - Wireless Communications
- Wireless LAN Card & Broadband Access
- Medical Electronics/Devices