text.skipToContent text.skipToNavigation

安森美钜惠节,海量现货限时优惠。

(不与其它优惠折扣同享) 

制造商型号

FDC6305N

Dual N-Channel 20V 0.08 Ohm 2.5V Specified PowerTrench Mosfet-SSOT-6

Product Specification Section
属性参数
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 5nC
封装类型:  SSOT-6
安装方式: Surface Mount
特性和应用

The FDC6305N is a 20V 0.08 Ohm Dual N-Channel 2.5V Specified PowerTrench Mosfet in a SSOT-6 package .

These N-Channel low threshold 2.5 V specified MOSFETs are produced using a PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Product Features :

  • 2.7 A, 20 V. RDS(on) = 0.08 Ω @ VGS = 4.5 V, RDS(on) = 0.12 Ω @ VGS = 2.5 V
  • Low gate charge (3.5 nC typical).
  • Fast switching speed.
  • High performance trench technology for extremelylow RDS(ON).
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
现货数量:
138,000
起订量:
3,000
递增量:
3,000
在途数量:Order inventroy details
117,000
工厂库存:工厂库存:
0
工厂货期:
N/A
总价
¥ 1,929.90
CNY

所有价格均包含13%增值税。

数量
价格
3,000
¥0.6433
9,000
¥0.6433
12,000
¥0.6433
30,000
¥0.6433
45,000+
¥0.6433