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安森美钜惠节,海量现货限时优惠。

(不与其它优惠折扣同享) 

Product Specification Section
属性参数
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 513mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.5A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 19ns
Rise Time: 20ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.8mm
Length: 6.7mm
Input Capacitance: 601pF
安装方式: Surface Mount
特性和应用

The NDT2955 Part Number is a -60 V P-Channel MOSFET is produced using Semiconductor’s high voltage Trench process. Its operating temperature ranges from -55 °C to 150 °C . It has been optimized for power management applications.

Features:

  • -2.5 A, -60 V
  • RDS(ON) = 300 mΩ @ VGS = -10 V
  • RDS(ON) = 500 mΩ @ VGS = -4.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widelyused surface mount package.

Applications:

  • DC/DC converter
  • Power management
  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
现货数量:
112,000
起订量:
4,000
递增量:
4,000
在途数量:Order inventroy details
504,000
工厂库存:工厂库存:
0
工厂货期:
N/A
总价
¥ 3,482.40
CNY

所有价格均包含13%增值税。

数量
价格
4,000
¥0.8706
8,000
¥0.8706
12,000
¥0.8706
16,000
¥0.8706
20,000+
¥0.8706