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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 3,000
递增量: 3,000
数量 价格
1 ¥1.7681
250 ¥1.093
500 ¥1.0287
750 ¥0.9966
1,500+ ¥0.884
总价:

¥ 2,652.00

CNY

所有价格均包含16%增值税。

属性
Attributes Table
Fet Type P-Ch
Drain-to-Source Voltage [Vdss] 20V
Drain-Source On Resistance-Max 48mΩ
Rated Power Dissipation 1.6|W
Qg Gate Charge 10nC
特性和应用

The FDC638P is a 20 V 48 mΩ, 2.5 V Specified PowerTrench P-Channel Mosfet available in a SSOT-6 package .

This P-Channel 2.5 V specified MOSFET is advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance     These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

Product Features:

  • 4.5 A, –20 V.RDS(ON) = 48 mW @ VGS = –4.5 V
  • RDS(ON) = 65 mW @ VGS = –2.5 V
  • Low gate charge (10 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices