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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 4,300

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 25
递增量: 25
数量 价格
25 ¥11.1079
150 ¥10.142
475+ ¥9.4981

¥ 277.70



Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 55V
Drain-Source On Resistance-Max 0.012Ω
Rated Power Dissipation 170|W
Qg Gate Charge 130nC
Gate-Source Voltage-Max [Vgss] 20V
Drain Current 81A
Turn-on Delay Time 11ns
Turn-off Delay Time 40ns
Rise Time 66ns
Fall Time 46ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4V
Input Capacitance 2900pF

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.


Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

The IRFP054NPBF is a Single N-Channel MOSFET. It comes in a TO-247AC package and is shipped in tubes.