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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 5,000
递增量: 2,500
数量 价格
2,500+ ¥2.2533
总价:

¥ 11,266.50

CNY

所有价格均包含16%增值税。

属性
Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 20mΩ
Rated Power Dissipation 36|W
特性和应用

The FDD6612A is a 30 V 20 mΩ N-Channel PowerTrench Mosfet Available in a TO-252 Package .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Features:

  • 30 A, 30 V
  • RDS(on) = 20 mΩ @ VGS = 10 V
  • RDS(on) = 28 mΩ @ VGS = 4.5 V
  • Low gate charge (9nC typical)
  • Fast switching
  • High performance trench technology for extremelylow RDS(on)

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access Point/Router
  • E-book Reader