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Product Variant Information section
Product Specification Section
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现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 2,500
递增量: 2,500
数量 价格
2,500+ ¥4.6663

¥ 11,665.75



Attributes Table
Fet Type Dual N-Ch
Drain-to-Source Voltage [Vdss] 20V
Drain-Source On Resistance-Max 13mΩ
Rated Power Dissipation 900|mW
Qg Gate Charge 24nC

The FDS6911 is a N-Channel Logic Level MOSFET that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.


  • RDS(on) = 13 mΩ @ VGS = 10 V
  • RDS(on) = 17 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability