|Fet Type||Dual N-Ch|
|Drain-to-Source Voltage [Vdss]||20V|
|Drain-Source On Resistance-Max||13mΩ|
|Rated Power Dissipation||900|mW|
|Qg Gate Charge||24nC|
The FDS6911 is a N-Channel Logic Level MOSFET that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- RDS(on) = 13 mΩ @ VGS = 10 V
- RDS(on) = 17 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability