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Product Variant Information section
Product Specification Section
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现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 3,000
递增量: 3,000
数量 价格
3,000+ ¥5.5044

¥ 16,513.20



Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 1.8mΩ
Rated Power Dissipation 96|W
Qg Gate Charge 95nC

The FDMS7656AS is designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.


  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
  • Max rDS(on) = 1.9 mΩ at VGS = 7 V, ID = 27 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant


  • Synchronous Rectifier for DC/DC Converters
  • Notebook Vcore/ GPU low side switch
  • Networking Point of Load low side switch
  • Telecom secondary side rectification

View the Complete family of FDMS Mosfet Transistors