SI2308BDS 系列 N沟道 20 V 0.156 Ohm 功率Mosfet 表面贴装 - TO-236-3
As part of the Vishay Siliconix commitment to delivering customers with reliable and cost-effective products, we are announcing the expansion of assembly and test capacity in our trade-friendly facility in Kaohsiung, Taiwan on selected LVM Power MOSFETs. The package types included are the TSOP6 and SSOT23. Power MOSFETs shipped from this facility will be tariff-free. This advisory is intended for US based customers and orders.To take advantage of this tariff-free initiative, customers will need to order the parts with a new ordering prefix code�_BE3� (instead of our standard _GE3). The table showing the current and new ordering codes can be found on page 2, 3 and 4 of this document.
|Drain-to-Source Voltage [Vdss]:||60V|
|Drain-Source On Resistance-Max:||0.156Ω|
|Rated Power Dissipation:||1.66|W|
|Qg Gate Charge:||2.3nC|