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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 714,000

在途数量:Order inventroy details 600,000
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 3,000
递增量: 3,000
数量 价格
3,000 ¥0.5035
9,000 ¥0.5035
15,000 ¥0.5035
30,000 ¥0.5035
60,000+ ¥0.5035
总价:

¥ 1,510.50

CNY

所有价格均包含13%增值税。

属性
Attributes Table
Fet Type P-Ch
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 80mΩ
Rated Power Dissipation 0.5|W
特性和应用

The FDN360P is a 30 V 80 mΩ single P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • -2 A, -30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • Low gate charge (6.2nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power version of industry Standard SOT-23package

Applications:

  • Low voltage and battery powered application
  • Low in-line power loss and fast switching 

View the complete family of P-channel mosfets