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安森美钜惠节,海量现货限时优惠。

(不与其它优惠折扣同享) 

制造商型号

FDN360P

Single P-Channel 30 V 80 mOhm PowerTrench Mosfet - SSOT-3

Product Specification Section
属性参数
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 0.5|W
封装类型:  SSOT-3
安装方式: Surface Mount
特性和应用

The FDN360P is a 30 V 80 mΩ single P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance

Features:

  • -2 A, -30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • Low gate charge (6.2nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • High power version of industry Standard SOT-23package

Applications:

  • Low voltage and battery powered application
  • Low in-line power loss and fast switching 

View the complete family of P-channel mosfets

Pricing Section
现货数量:
150,000
起订量:
3,000
递增量:
3,000
在途数量:Order inventroy details
1,134,000
工厂库存:工厂库存:
0
工厂货期:
N/A
总价
¥ 1,989.90
CNY

所有价格均包含13%增值税。

数量
价格
3,000+
¥0.6633