text.skipToContent text.skipToNavigation

制造商型号

SI7949DP-T1-E3

双 P 沟道 60 V 0.064 Ohms 表面贴装 功率 Mosfet - PowerPAK SO-8

ECAD模型:
制造商: Vishay
标准包装:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7949DP-T1-E3 - 属性参数
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.064Ω
Rated Power Dissipation: 1.5|W
Qg Gate Charge: 40nC
封装类型:  POWERPAK-SO-8
安装方式: Surface Mount
特性和应用
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.  The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.The Si7949DP features a new low thermal resistance PowerPAK® with a low 1.07-mm profile and TrenchFET® Power MOSFET Technology.  This 60V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 64 milliohms at a 60-V gate drive voltage.
Pricing Section
全球库存:
0
美国仓库 (线上独占库存):
0
在途:
0
工厂库存:工厂库存:
0
工厂货期:
9 周
起订量:
3000
递增量:
3000
总价
¥ 16,550.40
CNY

所有价格均包含13%增值税。

数量
价格
3,000
¥5.5168
6,000+
¥5.3125
Product Variant Information section