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现货数量: 0

在途数量:Order inventroy details 783
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 50
递增量: 1
数量 价格
50 ¥5.2005
250 ¥3.6403
500 ¥3.4803
1,000 ¥3.3203
2,000+ ¥3.1603

¥ 260.02



Attributes Table
No of Channels 1
Isolation Voltage-RMS 4170V
CTR-Min 100%
Operating Temp-Max 100°C

The H11AG1M device consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package.

This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable  electronics isolation applications.


  • High efficiency low degradation liquid epitaxial IRED
  • Logic level compatible, input and output currents, with CMOS and LS/TTL
  • High DC current transfer ratio at low input currents (as low as 200μA)
  • Underwriters Laboratory (UL) recognized File #E90700, Volume 2
  • IEC 60747-5-2 approved (ordering option V)


  • CMOS driven solid state reliability
  • Telephone ring detector
  • Digital logic isolation