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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 78,400

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 800
递增量: 800
数量 价格
800+ ¥9.335
总价:

¥ 7,468.00

CNY

所有价格均包含16%增值税。

属性
Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 200V
Drain-Source On Resistance-Max 0.049Ω
Rated Power Dissipation 357|W
Qg Gate Charge 49nC
特性和应用

The FDB52N20TM is a Part of FDB52N20 Series 200 V 0.049 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features :

  • 52 A, 200 VRDS(on) = 0.049 mΩ @ VGS = 10 V
  • Low gate charge ( typical 49 nC)
  • Low Crss ( typical 66 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficient S.M.P.S
  • Active power factor correction