text.skipToContent text.skipToNavigation

制造商型号

NVD6416ANLT4G-VF01

NVD6416ANL 系列 100 V 19 A 74 mOhm 表面贴装 N-沟道 功率 MOSFET - DPAK-3

ECAD模型:
制造商: onsemi
标准包装:
Product Variant Information section
Date Code: 2345
Product Specification Section
onsemi NVD6416ANLT4G-VF01 - 属性参数
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 74mΩ
Rated Power Dissipation: 71W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 19A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 35ns
Rise Time: 16ns
Fall Time: 40ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.2V
Height - Max: 2.38mm
Length: 6.73mm
Input Capacitance: 700pF
封装类型:  TO-252-3 (DPAK)
安装方式: Surface Mount
Pricing Section
全球库存:
682,500
美国仓库 (线上独占库存):
682,500
在途:
0
工厂库存:工厂库存:
0
工厂货期:
31 周
起订量:
2500
递增量:
2500
总价
¥ 8,786.00
CNY

所有价格均包含13%增值税。

数量
价格
2,500
¥3.5144
5,000
¥3.4326
7,500
¥3.3918
10,000+
¥3.3509
Product Variant Information section