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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 3,000
递增量: 3,000
数量 价格
3,000+ ¥8.9862

¥ 26,958.60



Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 150V
Drain-Source On Resistance-Max 21mΩ
Rated Power Dissipation 104|W
Qg Gate Charge 26nC

The FDMS86200 is a N-Channel MOSFET. It is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.


  • Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
  • Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Applications:

    • DC-DC Conversion

    View the complete FDMS86x series of MosFets