text.skipToContent text.skipToNavigation

制造商型号

NTJD4001NT1G

NTJD 系列 双 N-沟道 30 V 1 Ohm 272 mW 表面贴装 小信号 MOSFET - SOT-363

Product Specification Section
onsemi NTJD4001NT1G - 属性参数
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 272|mW
Qg Gate Charge: 1.3nC
封装类型:  SOT-363 (SC-70-6, SC-88)
安装方式: Surface Mount
$特性和应用

The NTJD4001NT1G is a part of NTJD4001N series dual N−channel MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.

Features:

  • Low Gate Charge for Fast Switching
  • Small Footprint−30% Smaller than TSOP−6
  • ESD Protected Gate
  • Pb−Free Package is Available

Applications:

  • Low Side Load Switch
  • Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC
  • Buck Converters
  • Level Shifts

View the available family of dual N−channel MOSFET

Pricing Section
全球库存:
66,000
新加坡仓库:
60,000
美国仓库 (线上独占库存):
6,000
1,146,000
工厂库存:工厂库存:
0
工厂货期:
N/A
起订量:
3000
递增量:
3000
总价
¥ 2,212.20
CNY

所有价格均包含13%增值税。

数量
价格
3,000
¥0.7374
9,000
¥0.7085
12,000
¥0.7013
30,000
¥0.6787
45,000+
¥0.6562