text.skipToContent text.skipToNavigation
Product Specification Section
onsemi NTJD4001NT1G - 属性参数
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 272|mW
Qg Gate Charge: 1.3nC
封装类型:  SOT-363 (SC-70-6, SC-88)
安装方式: Surface Mount
特性和应用

The NTJD4001NT1G is a part of NTJD4001N series dual N−channel MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.

Features:

  • Low Gate Charge for Fast Switching
  • Small Footprint−30% Smaller than TSOP−6
  • ESD Protected Gate
  • Pb−Free Package is Available

Applications:

  • Low Side Load Switch
  • Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC
  • Buck Converters
  • Level Shifts

View the available family of dual N−channel MOSFET

Pricing Section
全球库存:
30,000
新加坡仓库:
30,000
在途:
0
工厂库存:工厂库存:
0
工厂货期:
20 周
起订量:
3000
递增量:
3000
总价
¥ 2,135.70
CNY

所有价格均包含13%增值税。

数量
价格
3,000
¥0.7119
9,000
¥0.6841
12,000
¥0.6775
30,000
¥0.6555
45,000+
¥0.6334