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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 5,100

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 25
递增量: 25
数量 价格
25 ¥7.6048
175 ¥7.0012
650+ ¥6.4781

¥ 190.12



Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 100V
Drain-Source On Resistance-Max 0.036Ω
Rated Power Dissipation 160W
Qg Gate Charge 110nC
Gate-Source Voltage-Max [Vgss] 20V
Drain Current 42A
Turn-on Delay Time 11ns
Turn-off Delay Time 45ns
Rise Time 56ns
Fall Time 40ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold 4V
Technology Advanced Process Technology
Height - Max 20.3mm
Length 15.9mm
Input Capacitance 1900pF

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.


Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

The IRFP150NPBF is a Single N-Channel MOSFET. It comes in a TO-247AC package and is shipped in tubes.