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Product Specification Section
Pricing Section

现货数量: 492,000

在途数量:Order inventroy details 1,836,000
工厂库存:工厂库存: 0
工厂货期: 36 周
起订量: 3,000
递增量: 3,000
数量 价格
3,000 ¥0.1779
24,000+ ¥0.1626

¥ 533.70



Attributes Table
Type General Purpose
Polarity NPN
CE Voltage-Max 160V
Collector Current Max 600mA
Power Dissipation-Tot 225mW
Collector - Base Voltage 180V
Collector - Emitter Saturation Voltage 0.2V
Emitter - Base Voltage 6V
DC Current Gain-Min 30
Configuration Single
Collector - Current Cutoff 50nA
Operating Temp Range -55°C to +150°C
Moisture Sensitivity Level 1

The MMBT5551LT1G is a NPN silicon high voltage transistor with voltage of 160 V, available in a SOT-23 package.


  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

View the List of available MMBT Series of Bipolar Transistors