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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 3,000
递增量: 3,000
数量 价格
1 ¥2.9775
250 ¥2.052
500 ¥1.9314
750 ¥1.8911
1,500+ ¥1.7301
总价:

¥ 5,190.30

CNY

所有价格均包含16%增值税。

属性
Attributes Table
Fet Type Dual P-Ch
Drain-to-Source Voltage [Vdss] 30V
Drain-Source On Resistance-Max 0.17Ω
Rated Power Dissipation 0.7|W
Qg Gate Charge 3.5nC
特性和应用

The FDC6506P is a part of FDC6506 Series 30 V 0.17 Ω Dual P-Channel logic level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features:

  • -1.8 A, -30 V. RDS(on) = 0.170 W @ VGS = -10 V
  • RDS(on) = 0.280 W @ VGS = -4.5 V
  • Low gate charge (2.3nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM-6 package

Applications:

  • Load switch
  • Battery protection
  • Power management

View the FDC6506 Series of P-channel Mosfets