text.skipToContent text.skipToNavigation

安森美钜惠节,海量现货限时优惠。

(不与其它优惠折扣同享) 

制造商型号

MMBF170LT1G

单 N-沟道 60 V 225 mW 硅 表面贴装 Mosfet - SOT-23

Product Specification Section
属性参数
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 225mW
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.5A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1.01mm
Length: 3.04mm
Input Capacitance: 60pF
封装类型:  SOT-23 (SC-59,TO-236)
安装方式: Surface Mount
Pricing Section
现货数量:
2,184,000
起订量:
3,000
递增量:
3,000
在途数量:Order inventroy details
660,000
工厂库存:工厂库存:
0
工厂货期:
8 周
总价
¥ 512.70
CNY

所有价格均包含13%增值税。

数量
价格
3,000
¥0.1709
9,000
¥0.1709
15,000
¥0.1709
45,000
¥0.1709
75,000+
¥0.1709