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制造商型号

NDT3055L

N-沟道 60 V 0.1Ω 表面贴装 增强型 场效应 晶体管 SOT-223

Product Specification Section
onsemi NDT3055L - 属性参数
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.1Ω
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 20nC
封装类型:  SOT-223 (TO-261-4, SC-73)
安装方式: Surface Mount
特性和应用

The NDT3055L Part Number is a Logic level N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features:

  • 4 A, 60 V
  • RDS(ON) = 0.100 Ω @ VGS = 10 V
  • RDS(ON) = 0.120 Ω @ VGS = 4.5 V
  • High density cell design for extremely lowRDS(ON).
  • High power and current handling capability in a widely used surface mount package

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
全球库存:
348,000
新加坡仓库:
64,000
美国仓库 (线上独占库存):
284,000
在途:
0
工厂库存:工厂库存:
0
工厂货期:
9 周
起订量:
4000
递增量:
4000
总价
¥ 12,804.00
CNY

所有价格均包含13%增值税。

数量
价格
4,000
¥3.201
8,000
¥3.1189
12,000+
¥3.0369