制造商型号
NDT3055L
N-沟道 60 V 0.1Ω 表面贴装 增强型 场效应 晶体管 SOT-223
Product Specification Section
onsemi NDT3055L - 产品规格
onsemi NDT3055L - 属性参数
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 0.1Ω |
Rated Power Dissipation: | 1.1|W |
Qg Gate Charge: | 20nC |
封装类型: | SOT-223 (TO-261-4, SC-73) |
安装方式: | Surface Mount |
特性和应用
The NDT3055L Part Number is a Logic level N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features:
- 4 A, 60 V
- RDS(ON) = 0.100 Ω @ VGS = 10 V
- RDS(ON) = 0.120 Ω @ VGS = 4.5 V
- High density cell design for extremely lowRDS(ON).
- High power and current handling capability in a widely used surface mount package
Applications:
- Automation
- Broadband Access
- Broadband Modem
- Broadcast & Studio
- Building & Home Control
- Camcorder
Pricing Section
全球库存:
348,000
新加坡仓库:
64,000
美国仓库 (线上独占库存):
284,000
在途:
0
工厂货期:
9 周
数量
价格
4,000
¥3.201
8,000
¥3.1189
12,000+
¥3.0369
Product Variant Information section
可提供的包装方式
标准包装数量:
4000/卷盘
封装类型:
SOT-223 (TO-261-4, SC-73)
安装方式:
Surface Mount