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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 53,250

在途数量:Order inventroy details 360
工厂库存:工厂库存: 0
工厂货期: 42 周
起订量: 30
递增量: 30
数量 价格
30 ¥18.2663
120 ¥16.7507
330+ ¥16.0329
总价:

¥ 547.99

CNY

所有价格均包含16%增值税。

属性
Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 1500V
Drain-Source On Resistance-Max
Rated Power Dissipation 63|W
Qg Gate Charge 29.3nC
特性和应用

The STFW3N150 device Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Features:

  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • Fully isolated TO-3PF plastic package
  • Creepage distance path is 5.4 mm (typ.) for TO-3PF

Application:

  • Switching applications