|Drain-to-Source Voltage [Vdss]||1500V|
|Drain-Source On Resistance-Max||9Ω|
|Rated Power Dissipation||63|W|
|Qg Gate Charge||29.3nC|
The STFW3N150 device Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Switching applications