制造商型号
SST25VF016B-50-4C-S2AF
SST25VF系列 16Mb 2 Mx8 3V 表面贴装 SPI 串行闪存-SOIC-8
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| 制造商: | Microchip | ||||||||||
| 标准包装: | Product Variant Information section 可提供的包装方式标准包装数量：90/管装 封装类型：SOIC-8 安装方式：Surface Mount | ||||||||||
| Date Code: | 1832 | ||||||||||
产品规格
发货信息:
ECCN:
产品变更通知:
Description of Change:Qualification of MTAI as a new final test site for selected SST25VF016B-50xxx products available in 8L SOIJ (5.4x5.4x2.16mm) package.Pre Change:Tested at KYE final test site.Post Change:Tested at MTAI final test siteReason for Change:To improve manufacturability by qualifying MTAI as a new final test site. Estimated First Ship Date:March 23, 2020 (date code: 2013)
February 17, 2020: Issued initial notification.March 4, 2020: Issued final notification. Attached the qualification report. Provided the estimated first ship date to be on March 15, 2020.Description of Change:Qualification of MTAI as a new assembly site for selected products available in 8L SOIJ (.208 in) package.Pre-Change:Assembled at LPI assembly site using 8290 die attached material.Post Change:Assembled at MTAI assembly site using 8006NS die attached material.Reason for Change:To improve productivity by qualifying MTAI as a new assembly site.Change Implementation Status:In ProgressEstimated First Ship Date:March 15, 2020 (date code: 2012)NOTE: Please be advised that after the estimated first ship date customers may receive pre and post change parts.
产品生命周期:
属性参数
| Program Memory Type: | Flash |
| Clock Frequency-Max: | 50MHz |
| InterfaceType / Connectivity: | SPI |
| Memory Density: | 16Mb |
| Memory Organization: | 2 M x 8 |
| Supply Voltage-Nom: | 2.7V to 3.6V |
| Temperature Grade: | Commercial |
| Operating Temp Range: | -40°C to +85°C |
| Storage Temperature Range: | -65°C to +150°C |
| 封装类型： | SOIC-8 |
| 安装方式： | Surface Mount |
特性和应用
SST的25系列串行闪存系列采用四线、SPI兼容的接口，实现了占用更少电路板空间的低引脚数封装，并最终降低了总体系统成本。与原来的SST25VFxxxA器件相比，SST25VF016B器件是增强版本，提高了工作频率，并实现了更低的功耗。SST25VF016B SPI串行闪存存储器采用SST专有的、高性能CMOS SuperFlash技术制造。与其他方法相比，分离栅极单元设计和厚氧化层隧穿注入器可实现更高的可靠性和可制造性。
SST25VF016B器件可以显著提高性能和可靠性，同时降低功耗。SST25VF016B使用2.7至3.6 V电源进行写操作（编程或擦除）。消耗的总能量是应用中施加电压、电流和时间的函数。对于任何给定的电压范围，SuperFlash 技术的编程电流更低、擦除时间更短；因此，在任何擦除或编程操作期间消耗的总能量低于其他闪存技术。
SST25VF016B器件提供8引脚SOIC（200 mil）和8触点WSON（6 mm x 5 mm）封装。
它是一款16 Mb的SPI串行闪存产品，工作于商业温度范围（0˚C至70˚C），采用8引脚SOIC封装。该器件支持50纳秒的速度，并符合RoHS标准。可提供的包装方式
标准包装数量：
90/管装
封装类型：
SOIC-8
安装方式：
Surface Mount
