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Product Variant Information section
Product Specification Section
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现货数量: 0

在途数量: 0
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 2,500
递增量: 2,500
数量 价格
2,500+ ¥3.4476

¥ 8,619.00



Attributes Table
Fet Type Dual N/P-Ch
Drain-to-Source Voltage [Vdss] 30V/-20V
Drain-Source On Resistance-Max 0.03Ω/0.055Ω
Rated Power Dissipation 0.9|W
Qg Gate Charge 19.8nC/20nC

The FDS8928A is a 30 V 30 mΩ dual N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance 


  • N-Channel 5.5 A,30 V,
    • RDS(ON)=0.030 Ω @ VGS=4.5 V,
    • RDS(ON)=0.038 Ω @ VGS=2.5 V.
  • P-Channel -4 A,-20 V,
    • RDS(ON)=0.055 Ω @ VGS=-4.5 V,
    • RDS(ON)=0.072 Ω @ VGS=-2.5 V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used SMT package.
  • Dual (N & P-Channel) MOSFET in surface mount package. 


  • Low voltage applications
  • Power Supplies
  • Notebook computer
  • Power management
  • Battery powered circuits