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制造商型号

STW45NM60

STW45NM60系列 N沟道 650 V 0.11 Ohm MDmesh 功率MOSFET - TO-247-3

ECAD模型:
制造商: STMicroelectronics
标准包装:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW45NM60 - 属性参数
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 417|W
Qg Gate Charge: 134nC
封装类型:  TO-247-3
安装方式: Flange Mount
$特性和应用

The STW4NM60 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.

Features:

  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching application
Pricing Section
全球库存:
0
美国仓库 (线上独占库存):
0
在途:
0
工厂库存:工厂库存:
0
工厂货期:
52 周
起订量:
600
递增量:
30
总价
¥ 93,362.16
CNY

所有价格均包含13%增值税。

数量
价格
1
¥194.5234
5
¥182.2568
25
¥170.8232
100
¥161.5097
250+
¥155.6036
Product Variant Information section