STW45NM60系列 N沟道 650 V 0.11 Ohm MDmesh 功率MOSFET - TO-247-3
|Drain-to-Source Voltage [Vdss]:||650V|
|Drain-Source On Resistance-Max:||0.11Ω|
|Rated Power Dissipation:||417|W|
|Qg Gate Charge:||134nC|
The STW4NM60 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Switching application