
制造商型号
STW45NM60
STW45NM60系列 N沟道 650 V 0.11 Ohm MDmesh 功率MOSFET - TO-247-3
Product Specification Section
STMicroelectronics STW45NM60 - 产品规格
STMicroelectronics STW45NM60 - 属性参数
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.11Ω |
Rated Power Dissipation: | 417|W |
Qg Gate Charge: | 134nC |
封装类型: | TO-247-3 |
安装方式: | Flange Mount |
$特性和应用
The STW4NM60 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.
Features:
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications:
- Switching application
Pricing Section
全球库存:
0
美国仓库 (线上独占库存):
0
在途:
0
工厂货期:
52 周
数量
价格
1
¥194.5234
5
¥182.2568
25
¥170.8232
100
¥161.5097
250+
¥155.6036
Product Variant Information section
可提供的包装方式
标准包装数量:
30/管装
封装类型:
TO-247-3
安装方式:
Flange Mount