
制造商型号
DMN6075S-7
DMN6075S 系列 60 V 2 A 表面贴装 N-沟道 增强型 Mosfet - SOT-23-3
Product Specification Section
Diodes Incorporated DMN6075S-7 - 产品规格
Diodes Incorporated DMN6075S-7 - 属性参数
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 120MΩ |
Rated Power Dissipation: | 0.8W |
Qg Gate Charge: | 12.3nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 2.5A |
Turn-on Delay Time: | 3.5ns |
Turn-off Delay Time: | 35ns |
Rise Time: | 4.1ns |
Fall Time: | 11ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 1mm |
Length: | 3mm |
Input Capacitance: | 606pF |
封装类型: | SOT-23 (SC-59,TO-236) |
安装方式: | Surface Mount |
Pricing Section
全球库存:
777,000
新加坡仓库:
777,000
在途:
0
工厂货期:
8 周
数量
单价
3,000
¥0.3582
9,000
¥0.3492
15,000
¥0.3459
45,000
¥0.3369
75,000+
¥0.3294
Product Variant Information section
可提供的包装方式
标准包装数量:
3000/卷盘
封装类型:
SOT-23 (SC-59,TO-236)
安装方式:
Surface Mount