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制造商型号

DMN6075S-7

DMN6075S 系列 60 V 2 A 表面贴装 N-沟道 增强型 Mosfet - SOT-23-3

ECAD模型:
制造商: Diodes Incorporated
标准包装:
Date Code: 2308
Product Specification Section
Diodes Incorporated DMN6075S-7 - 属性参数
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 120MΩ
Rated Power Dissipation: 0.8W
Qg Gate Charge: 12.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.5A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 35ns
Rise Time: 4.1ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1mm
Length: 3mm
Input Capacitance: 606pF
封装类型:  SOT-23 (SC-59,TO-236)
安装方式: Surface Mount
Pricing Section
全球库存:
777,000
新加坡仓库:
777,000
在途:
0
工厂库存:工厂库存:
0
工厂货期:
8 周
起订量:
3000
递增量:
3000
总价
¥ 1,074.60
CNY

所有价格均包含13%增值税。

数量
单价
3,000
¥0.3582
9,000
¥0.3492
15,000
¥0.3459
45,000
¥0.3369
75,000+
¥0.3294