text.skipToContent text.skipToNavigation
Product Specification Section
属性参数
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.085Ω
Rated Power Dissipation: 0.46|W
Qg Gate Charge: 5nC
封装类型:  SSOT-3
安装方式: Surface Mount
特性和应用

The NDS355AN is a Part of NDS Series N-Channel Logic Level Enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • 1.7 A, 30 V
  • RDS(ON) = 0.125Ω @ VGS= 4.5 V
  • RDS(ON) = 0.085 Ω @ VGS= 10 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface mount package.

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
现货数量:
45,000
起订量:
3,000
递增量:
3,000
在途数量:
0
工厂库存:工厂库存:
0
工厂货期:
N/A
总价
¥ 2,774.10
CNY

所有价格均包含13%增值税。

数量
价格
3,000+
¥0.9247