text.skipToContent text.skipToNavigation

制造商型号

NDS331N

单 N-沟道 20 V 0.5 W 5 nC DMOS 表面贴装 Mosfet - SOT-23

Product Specification Section
属性参数
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.21Ω
Rated Power Dissipation: 0.5W
Qg Gate Charge: 5nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.3A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 10ns
Rise Time: 25ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: DMOS
Height - Max: 0.94mm
Length: 2.92mm
Input Capacitance: 162pF
封装类型:  SOT-23 (SC-59,TO-236)
安装方式: Surface Mount
特性和应用

The NDS331N is a Part of NDS Series N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • 1.3 A, 20 V.
  • RDS(ON) = 0.21Ω @ VGS= 2.7 V
  • RDS(ON) = 0.16 Ω @ VGS= 4.5 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability.

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
现货数量:
684,000
起订量:
3,000
递增量:
3,000
在途数量:Order inventroy details
282,000
工厂库存:工厂库存:
0
工厂货期:
N/A
总价
¥ 1,738.80
CNY

所有价格均包含13%增值税。

数量
价格
3,000
¥0.5796
9,000
¥0.5796
15,000
¥0.5796
45,000
¥0.5796
75,000+
¥0.5796