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Product Variant Information section
Product Specification Section
Pricing Section

现货数量: 1,089,000

在途数量:Order inventroy details 402,000
工厂库存:工厂库存: 0
工厂货期: N/A
起订量: 3,000
递增量: 3,000
数量 价格
3,000 ¥0.4147
9,000 ¥0.4147
15,000 ¥0.4147
45,000 ¥0.4147
75,000+ ¥0.4147

¥ 1,244.10



Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 20V
Drain-Source On Resistance-Max 0.21Ω
Rated Power Dissipation 0.5W
Qg Gate Charge 5nC
Gate-Source Voltage-Max [Vgss] 8V
Drain Current 1.3A
Turn-on Delay Time 5ns
Turn-off Delay Time 10ns
Rise Time 25ns
Fall Time 5ns
Operating Temp Range -55°C to +150°C
Gate Source Threshold 1V
Technology DMOS
Height - Max 0.94mm
Length 2.92mm
Input Capacitance 162pF

The NDS331N is a Part of NDS Series N-Channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.


  • 1.3 A, 20 V.
  • RDS(ON) = 0.21Ω @ VGS= 2.7 V
  • RDS(ON) = 0.16 Ω @ VGS= 4.5 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability.


  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder