With the advancement of manufacturing technology, the cost of silicon carbide (SiC) devices and modules has been reduced year by year, driven by the continuous demand. The R&D and implementation of related products have been greatly accelerated. New energy vehicles, renewable energy and energy storage are some of the fastest growing application fields.
Future Electronics has been committed to creating customized solutions for customers with its professional technical services. While shortening the product design cycle for customers, Future Electronics also further accelerates the development of the industry. Based on their expertise and project experience, the experts at Future Electronics have written a series of articles related to SiC design in the application fields of the third generation semiconductors, to provide some design reference to customers and look forward to further communication with them.
SiC Design Sharing Series (1): Analysis and Discussion of SiC MOSFET Drive Voltage
|Compared with silicon devices, silicon carbide devices are different in material, structure, and device characteristics. Therefore, the existing driving methods of Si-based power devices cannot be used to directly drive SiC power devices. The driving of SiC power devices requires more design considerations. In the drive circuit design, the drive voltage Vgs and the gate voltage threshold Vgs(th) will impact the reliability of the SiC MOSFET, the power loss (on-resistance, and the compatibility with the drive circuit. They are very critical parameters for SiC MOSFETs and need to be considered during the design process. Choosing different drive voltages in different designs will be more cost effective...|
SiC Design Sharing Series (2): Discussion on Parasitic Conduction of SiC MOSFET Driver Design
|For MOSFET devices, capacitive feedback at the gate can usually cause the semiconductor device to false turn-on. For SiC MOSFETs, the capacitive feedback caused by Miller capacitance particularly needs to be considered. The capacitive feedback caused by the Miller Effect may lead to the malfunction of the MOSFETs, and even lead to the shoot-through of high side and low side, causing short circuit and even damage to the power devices. In order to reduce the probability of false triggering of the device and improve the reliability of the product, we need to consider the corresponding measures and methods from the device level and the application level...|
SiC Design Sharing Series (3): Analysis of Parasitic Capacitance Loss of SiC MOSFET and Si MOSFET
|We all know that the higher the frequency of the switched-mode power supply, the more frequent the MOSFET changes its state, and the switching loss is proportional to the switching frequency. Of all the losses related to the switching frequency in the switched-mode power supply, the most significant is often the loss generated by the MOSFET itself. In this article, we have a power loss analysis between Si MOSFET solution and SiC MOSFET solution based on the parasitic capacitance of the MOSFETs and BOOST topology and take an in-depth look into the advantages of SiC MOSFET in applications.|
SiC Design Sharing Series (4): Discussion on desat design of SiC MOSFET design
|For high-power energy conversion applications, silicon carbide (SiC) MOSFETs offer many advantages over equivalent silicon IGBTs and MOSFETs, such as faster switching speeds, higher current density, and lower on-resistance. However, SiC MOSFETs also have their own problems, including short-circuit reliability and transient oscillations in high-frequency applications. The common current protection method is to use a current sensor for accurate overcurrent protection, and Desat protection is regarded as a secondary protection. In special fault situations, such as bridge shoot-through or inverter shorted to ground at the inverter output end before the filter, the current sensor cannot detect such faults, and desat protection becomes the most important way to protect power devices...|