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Manufacturer Part #

FDC6305N

Dual N-Channel 20V 0.08 Ohm 2.5V Specified PowerTrench Mosfet-SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 5nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6305N is a 20V 0.08 Ohm Dual N-Channel 2.5V Specified PowerTrench Mosfet in a SSOT-6 package .

These N-Channel low threshold 2.5 V specified MOSFETs are produced using a PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Product Features :

  • 2.7 A, 20 V. RDS(on) = 0.08 Ω @ VGS = 4.5 V, RDS(on) = 0.12 Ω @ VGS = 2.5 V
  • Low gate charge (3.5 nC typical).
  • Fast switching speed.
  • High performance trench technology for extremelylow RDS(ON).
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
Singapore:
0
1,017,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
¥23,713.50
CNY

Prices include 13% VAT.

Quantity
Web Price
3,000+
¥7.9045
Product Variant Information section