text.skipToContent text.skipToNavigation
Product Variant Information section
Product Specification Section
Pricing Section

Stock: 60,000

On Order:Order inventroy details 12,500
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 2,500
Multiple Of: 2,500
Quantity Web Price
2,500+ ¥2.0338



Prices include 13% VAT.

Attributes Table
Fet Type N-Ch
Drain-to-Source Voltage [Vdss] 800V
Drain-Source On Resistance-Max 20Ω
Rated Power Dissipation 2.5|W
Qg Gate Charge 7.2nC
Features and Applications

The FQD1N80TM is a 800 V 20 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.


  • 1.0 A, 800 V
  • RDS(on) = 20 Ω @VGS = 10 V
  • Low gate charge ( typical 5.5 nC)
  • Low Crss ( typical 2.7 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability


  • Audio amplifier
  • High efficiency switching
  • DC/DC converters
  • DC motor control